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Preliminary Technical Information
HiPerFASTTM IGBT
Lightspeed 2TM Series
IXGK120N60C2 IXGX120N60C2
VCES IC110 VCE(sat) tfi(typ)
= = =
600V 120A 2.5V 80ns
TO-264(IXGK) Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md FC TL TSOLD Weight Mounting torque (TO-264) Mounting force (PLUS247) Maximum lead temperature for soldering Plastic body for 10 seconds TO-264 PLUS247 Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C (limited by leads) TC = 110C (chip capability) TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 1 Clamped inductive load @ VCE 600V TC = 25C 830 -55 ... +150 150 -55 ... +150 1.13 / 10 20..120/4.5..27 300 260 10 6 W C C C Nm/lb.in N/lb C C g g G = Gate E = Emitter C = Collector
TAB = Collector G C (TAB)
Maximum Ratings 600 600 20 30 75 120 500 ICM = 200 V V V V A A A A PLUS247(IXGX)
G C E (TAB)
E
Features Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages High power density Very fast switching speeds for high frequency applications High power surface mountable packages
Symbol Test Conditions (TJ = 25C unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 1mA, VGE = 0V IC = 500A, VCE = VGE VCE = VCES VGE = 0V VCE = 0V, VGE = 20V IC = 100A, VGE = 15V, Note 1 TJ = 125C TJ = 125C
Characteristic Values Min. Typ. Max. 600 3.0 5.5 V V 100 A 2 mA 200 nA 2.1 1.6 2.5 V V
(c) 2007 IXYS CORPORATION,All rights reserved
DS99515A(11/07)
IXGK120N60C2 IXGX120N60C2
Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthJC 0.15 Inductive load, TJ = 25C IC = 80A, VGE = 15V VCE = 400V, RG = 1 IC = 100A, VGE = 15V, VCE = 0.5 * VCES VCE = 25V, VGE = 0V, f = 1MHz IC = 60A, VCE = 10V, Note 1 Min. 50 Characteristic Values Typ Max. 78 14.6 820 280 370 85 155 40 60 1.7 120 80 1.0 40 60 2.1 165 92 1.24 S nF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.15 C/W C/W
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83
TO-264 AA (IXGK) Outline
Pins:1-Gate 2- Drain 3 - Source Tab - Drain
Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
180 1.8
Inductive load, TJ = 125C IC = 80A, VGE = 15V VCE = 400V, RG = 1
PLUS 247TM (IXGX) Outline
Note: 1. Pulse test, t 300s; duty cycle, d 2%.
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
7,157,338B2
6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537
IXGK120N60C2 IXGX120N60C2
Fig. 1. Output Characteristics @ 25C
200 180 160 140 VGE = 15V 13V 11V 350 300 250 VGE = 15V 13V 11V
Fig. 2. Extended Output Characteristics @ 25C
IC - Amperes
120 100 80
IC - Amperes
9V
200 150
9V
8V 60 40 20 0 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3
8V 100 50 7V
7V 0 0 1 2 3 4 5 6 7 8 9 10
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ 125C
200 180 160 140 VGE = 15V 13V 11V 2.2 2.0 9V 1.8 1.6 1.4 1.2 1.0
Fig. 4. Dependence of VCE(sat) on Junction Temperature
VGE = 15V
120 100 80 60 40 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 7V 8V
VCE(sat) - Normalized
IC - Amperes
I
C
= 200A
I 0.8 0.6 I 0.4 -50 -25 0 25 50 75
C
= 100A
C
= 50A 125 150
100
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
4.5 TJ = 25C 4.0 140 120 100
Fig. 6. Input Admittance
IC - Amperes
3.5
VCE - Volts
TJ = 125C 25C - 40C
80 60 40 20
3.0 I 2.5 100A 2.0 50A 1.5 7 8 9 10 11 12 13 14 15
C
= 200A
0 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9
VGE - Volts
VGE - Volts
(c) 2007 IXYS CORPORATION,All rights reserved
IXGK120N60C2 IXGX120N60C2
Fig. 7. Transconductance
140 TJ = - 40C 120 100 25C 16 14 12 VCE = 300V I C = 100A I G = 10mA
Fig. 8. Gate Charge
g f s - Siemens
80 60 40 20 0 0 20 40 60 80 100 120 140 160
VGE - Volts
125C
10 8 6 4 2 0 0 50 100 150 200 250 300 350 400
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
100.0 220
Fig. 10. Reverse-Bias Safe Operating Area
200 180 160
f = 1 MHz Capacitance - NanoFarads
Cies
IC - Amperes
10.0
140 120 100 80 60 40 TJ = 125C RG = 1 dv / dt < 10V / ns
1.0
Coes
Cres 0.1 0 5 10 15 20 25 30 35 40
20 0 100 200 300 400 500 600 700
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.000
Z(th)JC - C / W
0.100
0.010
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGK120N60C2 IXGX120N60C2
Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance
5.0 4.5 4.0 Eoff VCE = 400V I = 120A Eon 6.0 3.6 3.2 2.8 Eoff VCE = 400V Eon
Fig. 13. Inductive Swiching Energy Loss vs. Collector Current
4.5
---
5.5 5.0 4.5
---TJ = 125C, 25C
TJ = 125C , VGE = 15V
RG = 1 , VGE = 15V
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 120
Eoff - MilliJoules
3.5 3.0 2.5 2.0 1.5 1.0 0.5 1 2 3 4 5 6 7 8 9 10 I C = 80A
C
Eoff - MilliJoules
2.4 2.0 1.6 1.2 0.8 0.4 0.0 40 50 60 70 80 90 100 110
E
E - MilliJoules
on
on 4.0 3.5 3.0 2.5 2.0 1.5
- MilliJoules
RG - Ohms
IC - Amperes
Fig. 14. Inductive Swiching Energy Loss vs. Junction Temperature
3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 25 35 45 55 65 75 85 95 105 115 I C = 80A Eoff VCE = 400V Eon 4.5 4.0 3.5 240 220 200
Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance
500
tf VCE = 400V
td(off) - - - -
TJ = 125C, VGE = 15V
450 400 350 I
C
t d(off) - Nanoseconds
I C = 120A
t f - Nanoseconds
Eoff - MilliJoules
E
----
180 160 140 120 100 80 1 2 3 4 5 6 7 8 9 10 I
C
on
3.0 2.5 2.0 1.5 1.0 125
- MilliJoules
RG = 1 , VGE = 15V
= 120A
300 250
= 80A
200 150 100
TJ - Degrees Centigrade
RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs. Collector Current
220 200 180 210 200 175 150 125 100 75
Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature
180 200 190 180 170
tf
VCE = 400V
td(off) - - - -
tf
VCE = 400V
td(off) - - - -
RG = 1 , VGE = 15V
RG = 1 , VGE = 15V
170 160
t f - Nanoseconds
160 140 120 100 80 60 40 20 0 40
t d(off) - Nanoseconds
t d(off) - Nanoseconds
t f - Nanoseconds
I
C
= 120A 150 140 130 I C = 80A 120 110 125
TJ = 125C
160 150 140
TJ = 25C
130 120 110
50 25 25 35 45 55 65 75 85 95 105 115
50
60
70
80
90
100
110
100 120
IC - Amperes
TJ - Degrees Centigrade
(c) 2007 IXYS CORPORATION,All rights reserved
IXGK120N60C2 IXGX120N60C2
Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance
180 160 140 120 100 80 60 40 1 2 3 4 5 6 7 8 9 10 I
C
Fig. 19. Inductive Turn-on Switching Times vs. Collector Current
100 120 110 90 80 70 100 52
tr
VCE = 400V
td(on) - - - -
tr
VCE = 400V
td(on) - - - -
50 48
TJ = 125C, VGE = 15V I = 120A
RG = 1 , VGE = 15V
t d(on) - Nanoseconds
t r - Nanoseconds
C
t r - Nanoseconds
90 80 70 60 50 40 TJ = 125C TJ = 25C
46 44 42 40 38 36 34 32 120
t d(on) - Nanoseconds
= 80A
60 50 40 30
30 20 40 50 60 70 80 90 100 110
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature
120 110 100 90 80 70 60 I C = 80A 50 25 35 45 55 65 75 85 95 105 115 36 125 50 48 46 44 42 40 38
t d(on) - Nanoseconds
t r - Nanoseconds
tr
VCE = 400V
td(on) - - - -
I
C
= 120A
RG = 1 , VGE = 15V
TJ - Degrees Centigrade
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_120N60C2(9D)11-06-07

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